Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Unidirectional volatile switching behavior is a typical resistive phenomenon in oxides, which has been proposed as attractive candidates for selection devices high density memory and neuromorphic systems applications with cross-point arrays. However, the microscopic origin of underlying mechanism still unclear due to lack direct experimental evidence. Here, performance device low forming voltage, OFF-state current, nonlinearity, excellent uniformity SiO2/TiO2 stacked structure. The nature unidirectional Pt/Ag/SiO2/TiO2/Ti revealed by using scanning electron microscope energy-dispersive X-ray spectroscopy analysis planar structure devices, can be attributed unstable conductive filament (CF) consisting Ag nanoparticles formed SiO2 layer, Schottky contact between CF TiO2 interface. This work provides clearly evidence deepen understanding themechanism behavior, provide guide further improve performances applications.